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http://hdl.handle.net/1813/19474
| Title: | Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film |
| Authors: | Boekelheide, Z.
Gray, A. X.
Papp, C.
Balke, B.
Stewart, D. A.
Ueda, S.
Kobayashi, K.
Hellman, F.
Fadley, C. S. |
| Keywords: | alloy
chromium
aluminum
electronic structure
photoemission
density functional theory
CrAl
band gap |
| Issue Date: | 3-Dec-2010 |
| Publisher: | American Physical Society |
| Citation: | Z. Boekelheide, A. X. Gray, C. Papp, B. Balke, D. A. Stewart, S. Ueda, K. Kobayashi, F. Hellman, and C. S. Fadley, Physical Review Letters, 105, 236404 (2010) |
| Abstract: | Cr(1-x)Alx exhibits semiconducting behavior for x=0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr0.80Al0.20 thin film show several features in the band region, including a gap at the Fermi energy (Ef) for which the valence band edge is 95 +- 14 meV below Ef. Theory agrees well with the valence band measurements, and shows an incomplete gap at Ef due to the hole band at M shifting almost below Ef. |
| URI: | http://hdl.handle.net/1813/19474 |
| Appears in Collections: | Cornell NanoScale Facility Papers, Research and Monographs
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