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|Title: ||Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film|
|Authors: ||Boekelheide, Z.|
Gray, A. X.
Stewart, D. A.
Fadley, C. S.
density functional theory
|Issue Date: ||3-Dec-2010|
|Publisher: ||American Physical Society|
|Citation: ||Z. Boekelheide, A. X. Gray, C. Papp, B. Balke, D. A. Stewart, S. Ueda, K. Kobayashi, F. Hellman, and C. S. Fadley, Physical Review Letters, 105, 236404 (2010)|
|Abstract: ||Cr(1-x)Alx exhibits semiconducting behavior for x=0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr0.80Al0.20 thin film show several features in the band region, including a gap at the Fermi energy (Ef) for which the valence band edge is 95 +- 14 meV below Ef. Theory agrees well with the valence band measurements, and shows an incomplete gap at Ef due to the hole band at M shifting almost below Ef.|
|Appears in Collections:||Cornell NanoScale Facility Papers, Research and Monographs|
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