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Please use this identifier to cite or link to this item: http://hdl.handle.net/1813/19474
Title: Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film
Authors: Boekelheide, Z.
Gray, A. X.
Papp, C.
Balke, B.
Stewart, D. A.
Ueda, S.
Kobayashi, K.
Hellman, F.
Fadley, C. S.
Keywords: alloy
chromium
aluminum
electronic structure
photoemission
density functional theory
CrAl
band gap
Issue Date: 3-Dec-2010
Publisher: American Physical Society
Citation: Z. Boekelheide, A. X. Gray, C. Papp, B. Balke, D. A. Stewart, S. Ueda, K. Kobayashi, F. Hellman, and C. S. Fadley, Physical Review Letters, 105, 236404 (2010)
Abstract: Cr(1-x)Alx exhibits semiconducting behavior for x=0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr0.80Al0.20 thin film show several features in the band region, including a gap at the Fermi energy (Ef) for which the valence band edge is 95 +- 14 meV below Ef. Theory agrees well with the valence band measurements, and shows an incomplete gap at Ef due to the hole band at M shifting almost below Ef.
URI: http://hdl.handle.net/1813/19474
Appears in Collections:Cornell NanoScale Facility Papers, Research and Monographs

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