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Please use this identifier to cite or link to this item: http://hdl.handle.net/1813/3719
Title: Properties of short channel ballistic carbon nanotube transistors with ohmic contacts
Authors: Leonard, Francois
Stewart, Derek
Keywords: nanotube
field effect transistor
non-equilibrium green's function
ohmic
Issue Date: 30-Aug-2006
Publisher: Institute of Physics
Citation: F. Leonard and D. A. Stewart, Nanotechnology, 17, 4699 (2006)
Abstract: We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band lineup at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diameter nanotubes, in agreement with recent experiments. For short channel ohmic contact devices, source-drain tunneling and drain-induced barrier lowering significantly impact the currrent-voltage characteristics. Furthermore, the ON state conductance shows a temperature dependence, even in the absence of phonon scattering or Schottky barriers. This last result also agrees with recently reported experimental measurements.
URI: http://hdl.handle.net/1813/3719
Appears in Collections:Cornell NanoScale Facility Papers, Research and Monographs

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